Designed for the toughest engineering environments, NXP Semiconductors N.V. (NASDAQ: NXPI) today unveiled its new XR family of “eXtremely Rugged” LDMOS RF power transistors. The XR family is designed ...
Cree Semiconductor Re-Enters High-Power RF Transistor Market SUMMARY HED: Gallium nitride transistors deliver 300 Watts at 2.7 GHz At the start of the DTV transition, Westinghouse and Cree partnered ...
Austin, June 16, 2025 (GLOBE NEWSWIRE) -- LDMOS RF Power Transistor Market Size & Growth Insights: According to the SNS Insider,“The LDMOS RF Power Transistor Market size was valued at USD 1.31 ...
NXP Semiconductors N.V. introduced the BLF188XR – the newest member of its XR family of “eXtremely Rugged” LDMOS RF power transistors. Designed for the toughest engineering environments, the BLF188XR ...
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Researchers achieve record-breaking RF GaN-on-Si transistor performance for high-efficiency 6G power amplifiers
Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility ...
SAN FRANCISCO--(BUSINESS WIRE)--June 13, 2006--RF Devices in Over-Molded Plastic Package Designed to Perform on Par with Air-Cavity Package at 2 GHz, Reduce Amplifier Cost and Streamline Automated ...
Freescale Semiconductor has introduced a 50V laterally diffused MOS (LDMOS) RF power transistor designed to deliver 50 percent higher output power than other UHF TV broadcast solutions. The ...
IRVINE, Calif., June 6, 2011 (GLOBE NEWSWIRE) -- Microsemi Corporation (Nasdaq:MSCC), a leading provider of semiconductor technology aimed at building a smart, secure, connected world, has expanded ...
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